www.shandor.infoSHANDOR Ltd. Plovdiv, Bulgaria

 

Type SN553M-xx80

Phase Control Press-Pack Thyristor

 

High power solutions for the power electronics industry

 

 

Maximum mean on-state current ITAV 800 A

Maximum repetitive peak off-state UDRM 3400 ¸ 4200 V

and reverse voltage URRM

Turn-off time tq ( typ) 400 ms

 

UDRM , URRM , V

 

3400

 

3600

 

3800

 

4000

 

4200

 

Voltage code - XX

 

34

 

36

 

38

 

40

 

42

 

Tvj, C

 

- 60 ¸ 125

 

MAXIMUM ALLOWABLE RATINGS

 

Symbols and parameters

 

Units

 

SN553M-xx80

 

Conditions

ITAV

 

Mean on-state current

 

 

A

800

1130

 

Tc=92 C,

Tc=70 C,

180 half-sine wave,

50 Hz

ITRMS

RMS on-state current

A

1255

Tc=82 C

ITSM

Surge on-state current

kA

15

Tvj=125C UR=0 tp=10 ms

I2t

Limiting load integral

kA2s

1125

Tvj=125C, tp=10 ms , UR=0

 

(di/dt) cr

 

Critical rate of rise

of on-state current :

non - repetitive

repetitive

 

A/ms

 

 

 

630

300

Tvj=125C ; UD=0,67 UDRM,

Gate pulse : 10V,5 W,

1ms rise time, 10 ms

URGM

Peak reverse gate voltage

V

5

 

Tstg

Storage temperature

C

-60 ¸ 125

 

Tvj

Junction temperature

C

-60 ¸ 125

 

 
CHARACTERISTICS

 

 

 

SN553Mxx80

 

Symbols and parameters

Units

Conditions

UTM

Peak on-state voltage

V

2,55

Tvj=25C, ITM=3,14 ITAV

UT(TO)

Threshold voltage

V

1,26

Tvj=125C

RT

On-state slope resistance

mW

0,57

Tvj=125C

IDRM

IRRM

Repetitive peak

off-state and

reverse current

 

mA

 

100

100

Tvj=125C,

UD = UDRM

UR= URRM

 

IL

 

Latching current

 

A

 

6

Tvj=25C,UD=12V

Gate pulse : 10V, 5W, 10ms

IH

Holding current

A

1,0

Tvj=25C,UD=12V, Gate open

UGT

Gate trigger direct voltage

V

2,5

Tvj=25C, UD=12V

IGT

Gate trigger direct current

A

0,3

UGD

Gate non-trigger direct voltage

V

0,25

Tvj=125C, UD = 0,67 UDRM

 

tgd

 

Delay time

 

ms

 

5,0

Tvj=25C,UD=500V

ITM = 800

Gate pulse : 10V, 5W,

1 ms rise time, 10ms

 

tgt

 

Turn-on time

 

ms

 

16,0

 

tq

 

Turn-off time (typ)

 

ms

 

400

 

Tvj=125C, ITM =800

diR/dt =10 A/ms, UR=100V

UD = 0,67 UDRM

duD/dt=50 V/ms

 

Qrr

 

Recovered charge (typ)

 

mC

 

2800

Tvj=125C, ITM =800

diR/dt =10 A/ms, UR=100V

(duD/dt)crit

Critical rate of rise of

off-state voltage

V/ms

500

1000

Tvj=125C, UD = 0,67 UDRM

Gate open

 

Rthjc

 

 

Thermal resistance junction

to case

 

C/W

 

0,017

 

Direct current,

double side cooled

 

 

 

 

Mounting force : 19÷ 28 kN

Weight : 580 gram