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SHANDOR Ltd. Plovdiv, Bulgaria
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Type SN553M-xx80
Phase Control Press-Pack Thyristor
High power solutions for the power electronics industry
Maximum mean on-state current ITAV 800 A Maximum repetitive peak off-state
UDRM 3400 ¸ 4200 V and reverse voltage URRM Turn-off time tq ( typ) 400 ms |
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UDRM , URRM , V |
3400 |
3600 |
3800 |
4000 |
4200 |
Voltage code - XX |
34 |
36 |
38 |
40 |
42 |
Tvj, °C |
- 60 ¸ 125 |
MAXIMUM ALLOWABLE RATINGS
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Symbols and parameters |
Units |
SN553M-xx80 |
Conditions |
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ITAV |
Mean on-state current
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A |
800 1130
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Tc=92 °C, Tc=70 °C, 180° half-sine wave, 50 Hz |
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ITRMS |
RMS on-state current |
A |
1255 |
Tc=82 °C |
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ITSM |
Surge on-state current |
kA |
15 |
Tvj=125°C UR=0 tp=10 ms |
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I2t |
Limiting load integral |
kA2s |
1125 |
Tvj=125°C, tp=10 ms , UR=0 |
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(diò/dt) cr |
Critical rate of rise of on-state current : non - repetitive repetitive |
A/ms |
630 300 |
Tvj=125°C ; UD=0,67 UDRM, Gate pulse : 10V,5 W, 1ms rise time, 10 ms |
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URGM |
Peak reverse gate voltage |
V |
5 |
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Tstg |
Storage temperature |
°C |
-60 ¸ 125 |
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Tvj |
Junction temperature |
°C |
-60 ¸ 125 |
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CHARACTERISTICS |
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SN553Mxx80 |
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Symbols and parameters |
Units |
Conditions |
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UTM |
Peak on-state voltage |
V |
2,55 |
Tvj=25°C, ITM=3,14 ITAV |
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UT(TO) |
Threshold voltage |
V |
1,26 |
Tvj=125°C |
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RT |
On-state slope resistance |
mW |
0,57 |
Tvj=125°C |
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IDRM IRRM |
Repetitive peak off-state and reverse current |
mA |
100 100 |
Tvj=125°C, UD = UDRM UR= URRM |
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IL |
Latching current |
A |
6 |
Tvj=25°C,UD=12V Gate pulse : 10V, 5W, 10ms |
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IH |
Holding current |
A |
1,0 |
Tvj=25°C,UD=12V, Gate open |
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UGT |
Gate trigger direct voltage |
V |
2,5 |
Tvj=25°C, UD=12V |
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IGT |
Gate trigger direct current |
A |
0,3 |
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UGD |
Gate non-trigger direct voltage |
V |
0,25 |
Tvj=125°C, UD = 0,67 UDRM |
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tgd |
Delay time |
ms |
5,0 |
Tvj=25°C,UD=500V ITM = 800 À Gate pulse : 10V, 5W, 1 ms rise time, 10ms |
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tgt |
Turn-on time |
ms |
16,0 |
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tq |
Turn-off time (typ) |
ms |
400
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Tvj=125°C, ITM =800 À diR/dt =10 A/ms, UR=100V UD =
0,67 UDRM duD/dt=50 V/ms |
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Qrr |
Recovered charge (typ) |
mC |
2800 |
Tvj=125°C, ITM =800 À diR/dt =10 A/ms, UR=100V |
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(duD/dt)crit
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Critical rate of rise of off-state voltage |
V/ms |
500 1000 |
Tvj=125°C, UD = 0,67 UDRM Gate open |
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Rthjc
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Thermal resistance junction to case |
°C/W |
0,017 |
Direct current, double side cooled |
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Mounting force : 19÷ 28 kN Weight : 580 gram |
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