s SN553M-xx80

www.shandor.infoSHANDOR  Ltd.  Plovdiv, Bulgaria

 

Type SN553M-xx80

Phase Control Press-Pack Thyristor

 

High power solutions for the power electronics industry

 

 

Maximum mean on-state current                                                        ITAV                      800 A

Maximum repetitive peak off-state                                                    UDRM               3400 ¸ 4200 V

and reverse voltage                                                                             URRM

Turn-off time                                                                                       tq ( typ)               400 ms 

 

UDRM ,  URRM ,   V

 

3400

 

3600

 

3800

 

4000

 

4200

 

Voltage code - XX

 

34

 

36

 

38

 

40

 

42

 

Tvj, °C

 

- 60 ¸ 125

 

MAXIMUM  ALLOWABLE  RATINGS

 

Symbols and parameters

 

Units

 

 SN553M-xx80

 

Conditions

  

ITAV           

 

Mean  on-state current                  

 

 

A

800

1130

 

Tc=92 °C,

Tc=70 °C,

180° half-sine wave,

50 Hz

ITRMS      

RMS on-state current                

A

1255

Tc=82 °C

ITSM 

Surge  on-state  current             

kA

15

Tvj=125°C  UR=0   tp=10 ms

I2t

Limiting load integral

kA2s

1125

Tvj=125°C,  tp=10 ms , UR=0  

 

(diò/dt) cr

 

Critical   rate of rise

of on-state current  :   

non - repetitive  

         repetitive         

 

A/ms

 

 

 

630

300

 

Tvj=125°C ;  UD=0,67 UDRM,

 Gate pulse : 10V,5 W,

1ms rise time, 10 ms

URGM      

Peak reverse  gate voltage 

V

5

 

Tstg   

Storage temperature

°C

-60 ¸ 125

 

Tvj        

Junction temperature  

°C

-60 ¸ 125

 

 
CHARACTERISTICS

 

 

 

 SN553Mxx80

 

Symbols and parameters

Units

Conditions

UTM         

Peak  on-state voltage            

V

2,55

Tvj=25°C, ITM=3,14 ITAV

UT(TO)

Threshold voltage

V

1,26

Tvj=125°C

RT

On-state slope resistance

mW

0,57

Tvj=125°C

 

IDRM      

IRRM                            

Repetitive peak

off-state and              

reverse   current

 

mA

 

100

100

Tvj=125°C,

UD = UDRM

UR=  URRM

 

IL

 

Latching current

 

A

 

6

Tvj=25°C,UD=12V

Gate pulse : 10V, 5W, 10ms

IH           

Holding current

A

1,0

Tvj=25°C,UD=12V, Gate open

UGT

Gate trigger direct voltage

V

2,5

Tvj=25°C, UD=12V

IGT      

Gate trigger direct current

A

0,3

UGD          

 Gate non-trigger direct  voltage           

V

0,25

Tvj=125°C, UD = 0,67 UDRM

 

tgd         

 

Delay time

 

ms

 

5,0

Tvj=25°C,UD=500V

 ITM = 800 À

Gate pulse : 10V, 5W,

1 ms rise time, 10ms

 

tgt           

 

Turn-on time

 

ms

 

16,0

 

tq            

 

Turn-off  time (typ)

 

ms

 

400

 

Tvj=125°C, ITM =800 À

diR/dt =10 A/ms, UR=100V

UD = 0,67 UDRM

duD/dt=50 V/ms

 

Qrr

 

Recovered charge (typ)

 

mC

 

2800

Tvj=125°C, ITM =800 À

diR/dt =10 A/ms, UR=100V

(duD/dt)crit              

            

Critical rate of rise of 

off-state voltage

V/ms

500

1000

Tvj=125°C,  UD = 0,67 UDRM

Gate open

 

Rthjc              

 

 

Thermal resistance junction

to  case

 

°C/W

 

0,017

 

Direct current,

double side cooled

 

 

 

 

 

     Mounting force : 19÷ 28 kN

     Weight : 580 gram