www.shandor.infoSHANDOR  Ltd.  Plovdiv, Bulgaria

 

Type SN543-xx40

Phase Control Press-Pack Thyristor

 

High power solutions for the power electronics industry

 

                                                                           

Maximum mean on-state current                                                        ITAV                     400 A

Maximum repetitive peak off-state                                                    UDRM               3600 ¸ 4600 V

and reverse voltage                                                                             URRM

Turn-off time                                                                                        tq                    400; 500 ms 

 

UDRM ,  URRM ,   V

 

3600

 

3800

 

4000

 

4200

 

4400

 

4600

 

Voltage code - XX

 

36

 

38

 

40

 

42

 

44

 

46

 

Tvj, °C

 

- 60 ¸ 125

 

MAXIMUM  ALLOWABLE  RATINGS

 

Symbols and parameters

 

Units

 

SN543-xx40

 

Conditions

  

ITAV           

 

Mean  on-state current                  

 

 

A

400

625

 

Tc=85 °C,

Tc=55 °C,

180° half-sine wave,

50 Hz

ITRMS      

RMS on-state current                 

A

628

Tc=85 °C

ITSM 

Surge  on-state  current            

kA

7,0

Tvj=125°C  UR=0   tp=10 ms

 

(diò/dt) cr

 

Critical   rate of rise

of on-state current  :   

non - repetitive  

         repetitive        

 

A/ms

 

 

 

400

200

 

Tvj=125°C ;  UD=0,67 UDRM,

 Gate pulse : 10V,5 W,

1ms rise time, 10 ms

URGM      

Peak reverse  gate voltage 

V

5

 

Tstg   

Storage temperature

°C

-60 ¸ 125

 

Tvj        

Junction temperature  

°C

-60 ¸ 125

 
CHARACTERISTICS

 

 

 

SN543 xx40

 

Symbols and parameters

Units

Conditions

UTM         

Peak  on-state voltage            

V

2,5

Tvj=25°C, ITM=3,14 ITAV

UT(TO)

Threshold voltage

V

1,35

Tvj=125°C

RT

On-state slope resistance

mW

1,25

Tvj=125°C

 

IDRM      

IRRM                            

Repetitive peak

off-state and              

reverse   current

 

mA

 

70

70

Tvj=125°C,

UD = UDRM

UR=  URRM

IL

Latching current

A

1

Tvj=25°C, UD=12V

Gate pulse : 10V, 5W,  10ms

IH           

Holding current

A

0,6

Tvj=25°C,UD=12V, Gate open

 

UGT

 

Gate trigger direct voltage

 

V

 

2,5

 

Tvj=25°C, UD=12V

 

IGT      

 

Gate trigger direct current

 

A

 

0,3

UGD          

 Gate non-trigger direct  voltage           

V

0,3

Tvj=125°C, UD = 0,67 UDRM

 

tgd         

 

Delay time

 

ms

 

3,2

Tvj=25°C,UD=500V

 ITM = 400 À

Gate pulse : 10V, 5W,

1 ms rise time, 10ms

 

tgt           

 

Turn-on time

 

ms

 

12

 

tq            

 

Turn-off  time

 

ms

 

 

 

400¸500

    

Tvj=125°C, ITM =400 À

diR/dt =10 A/ms, UR=100V

UD = 0,67 UDRM

duD/dt=50 V/ms 

 

 

Qrr

 

Recovered charge

 

mC

 

2500

Tvj=125°C, ITM =400 À

diR/dt =10 A/ms, UR=100V

(duD/dt)crit              

            

Critical rate of rise of 

off-state voltage

V/ms

500

1000

Tvj=125°C,  UD = 0,67 UDRM

Gate open

 

Rthjc              

 

 

Thermal resistance junction

to  case

 

°C/W

 

0,034

 

Direct current,

double side cooled

         

 

 

 

       Mounting force : 13 – 19

       Weight : 340 gram