www.shandor.infoSHANDOR Ltd. Plovdiv, Bulgaria

 

Type SN453-xx80

Phase Control Press-Pack Thyristor

 

High power solutions for the power electronics industry

 

 

Maximum mean on-state current ITAV 800 A

Maximum repetitive peak off-state UDRM 2200 ¸3600 V

and reverse voltage URRM

Turn-off time tq 160; 250; 320 ms

 

UDRM , URRM , V

 

2200

 

2400

 

2600

 

2800

 

3000

 

3200

 

3400

 

3600

 

Voltage code - XX

 

22

 

24

 

26

 

28

 

30

 

32

 

34

 

36

 

Tvj, C

 

- 60 ¸ 125

  

MAXIMUM ALLOWABLE RATINGS

 

Symbols and parameters

 

Units

 

SN453-xx80

 

Conditions

ITAV

 

Mean on-state current

 

 

A

800

1280

 

Tc=88 C,

Tc=55 C,

180 half-sine wave,

50 Hz

ITRMS

RMS on-state current

A

1255

Tc=88 C

ITSM

Surge on-state current

kA

16

Tvj=125C UR=0 tp=10 ms

 

(di/dt) cr

 

Critical rate of rise

of on-state current :

non - repetitive

repetitive

 

A/ms

 

 

 

630

300

Tvj=125C ; UD=0,67 UDRM,

Gate pulse : 10V,5 W,

1ms rise time, 10 ms

URGM

Peak reverse gate voltage

V

5

 

Tstg

Storage temperature

C

-60 ¸ 125

 

Tvj

Junction temperature

C

-60 ¸ 125

 

CHARACTERISTICS

 

 

 

SN453 xx80

 

Symbols and parameters

Units

Conditions

UTM

Peak on-state voltage

V

2,3

Tvj=25C, ITM=3,14 ITAV

UT(TO)

Threshold voltage

V

1,34

Tvj=125C

RT

On-state slope resistance

mW

0,39

Tvj=125C

IDRM

IRRM

Repetitive peak

off-state and

reverse current

 

mA

 

100

100

Tvj=125C,

UD = UDRM

UR= URRM

 

IL

 

Latching current

 

A

 

6

Tvj=25C,UD=12V

Gate pulse : 10V, 5W, 10ms

IH

Holding current

A

1,0

Tvj=25C,UD=12V, Gate open

 

UGT

 

Gate trigger direct voltage

 

V

 

2,5

 

Tvj=25C, UD=12V

 

IGT

 

Gate trigger direct current

 

A

 

0,3

UGD

Gate non-trigger direct voltage

V

0,25

Tvj=125C, UD = 0,67 UDRM

 

tgd

 

Delay time

 

ms

 

4,0

Tvj=25C,UD=500V

ITM = 800

Gate pulse : 10V, 5W,

1 ms rise time, 10ms

 

tgt

 

Turn-on time

 

ms

 

10,0

 

tq

 

Turn-off time

 

ms

 

 

160¸320

Tvj=125C, ITM =800

diR/dt =10 A/ms, UR=100V

UD = 0,67 UDRM

duD/dt=50 V/ms

 

Qrr

 

Recovered charge (typ)

 

mC

 

2800

Tvj=125C, ITM =800

diR/dt =10 A/ms, UR=100V

(duD/dt)crit

Critical rate of rise of

off-state voltage

V/ms

500

1000

Tvj=125C, UD = 0,67 UDRM

Gate open

 

Rthjc

 

 

Thermal resistance junction

to case

 

C/W

 

0,02

 

Direct current,

double side cooled

 

 

Mounting force : 19÷ 28 kN

Weight : 580 gram