SHANDOR Ltd. Plovdiv, Bulgaria
|
Type SN453-xx80
Phase Control Press-Pack Thyristor
High power solutions for the power electronics industry
Maximum mean on-state current ITAV 800 A Maximum repetitive peak off-state
UDRM 2200 ¸3600 V and reverse voltage URRM Turn-off time tq 160; 250; 320 ms |
||||||||
UDRM , URRM , V |
2200 |
2400 |
2600 |
2800 |
3000 |
3200 |
3400 |
3600 |
Voltage code - XX |
22 |
24 |
26 |
28 |
30 |
32 |
34 |
36 |
Tvj, °C |
- 60 ¸ 125 |
MAXIMUM ALLOWABLE RATINGS
|
||||
Symbols and parameters |
Units |
SN453-xx80 |
Conditions |
|
ITAV |
Mean on-state current
|
A |
800 1280
|
Tc=88 °C, Tc=55 °C, 180° half-sine wave, 50 Hz |
ITRMS |
RMS on-state current |
A |
1255 |
Tc=88 °C |
ITSM |
Surge on-state current |
kA |
16 |
Tvj=125°C UR=0 tp=10 ms |
(diò/dt) cr |
Critical rate of rise of on-state current : non - repetitive repetitive |
A/ms |
630 300 |
Tvj=125°C ; UD=0,67 UDRM, Gate pulse : 10V,5 W, 1ms rise time, 10 ms |
URGM |
Peak reverse gate voltage |
V |
5 |
|
Tstg |
Storage temperature |
°C |
-60 ¸ 125 |
|
Tvj |
Junction temperature |
°C |
-60 ¸ 125 |
|
CHARACTERISTICS |
||||
|
|
SN453 xx80 |
|
|
Symbols and parameters |
Units |
Conditions |
||
UTM |
Peak on-state voltage |
V |
2,3 |
Tvj=25°C, ITM=3,14 ITAV |
UT(TO) |
Threshold voltage |
V |
1,34 |
Tvj=125°C |
RT |
On-state slope resistance |
mW |
0,39 |
Tvj=125°C |
IDRM IRRM |
Repetitive peak off-state and reverse current |
mA |
100 100 |
Tvj=125°C, UD = UDRM UR= URRM |
IL |
Latching current |
A |
6 |
Tvj=25°C,UD=12V Gate pulse : 10V, 5W, 10ms |
IH |
Holding current |
A |
1,0 |
Tvj=25°C,UD=12V, Gate open |
UGT |
Gate trigger direct voltage |
V |
2,5 |
Tvj=25°C, UD=12V |
IGT |
Gate trigger direct current |
A |
0,3 |
|
UGD |
Gate non-trigger direct voltage |
V |
0,25 |
Tvj=125°C, UD = 0,67 UDRM |
tgd |
Delay time |
ms |
4,0 |
Tvj=25°C,UD=500V ITM = 800 À Gate pulse : 10V, 5W, 1 ms rise time, 10ms |
tgt |
Turn-on time |
ms |
10,0 |
|
tq |
Turn-off time |
ms |
160¸320 |
Tvj=125°C, ITM =800 À diR/dt =10 A/ms, UR=100V UD =
0,67 UDRM duD/dt=50 V/ms |
Qrr |
Recovered charge (typ) |
mC |
2800 |
Tvj=125°C, ITM =800 À diR/dt =10 A/ms, UR=100V |
(duD/dt)crit
|
Critical rate of rise of off-state voltage |
V/ms |
500 1000 |
Tvj=125°C, UD = 0,67 UDRM Gate open |
Rthjc
|
Thermal resistance junction to case |
°C/W |
0,02 |
Direct current, double side cooled |
Mounting force : 19÷ 28 kN Weight : 580 gram |
|