SHANDOR Ltd. Plovdiv, Bulgaria
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Type SN53-xx12
Phase Control Press-Pack Thyristor
High power solutions for the power electronics industry
Maximum mean on-state current ITAV 1250 A Maximum repetitive peak off-state
UDRM 1000 ¸1800 V and reverse voltage URRM Turn-off time tq 160; 200; 250 ms |
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UDRM , URRM , V |
1000 |
1100 |
1200 |
1300 |
1400 |
1500 |
1600 |
1800 |
Voltage code - XX |
10 |
11 |
12 |
13 |
14 |
15 |
16 |
18 |
Tvj, °C |
- 60 ¸ 125 |
MAXIMUM ALLOWABLE RATINGS
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Symbols and parameters |
Units |
SN53-xx12 |
Conditions |
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ITAV |
Mean on-state current
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A |
1250 1970
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Tc=88 °C, Tc=55 °C, 180° half-sine wave, 50 Hz |
ITRMS |
RMS on-state current |
A |
1960 |
Tc=88 °C |
ITSM |
Surge on-state current |
kA |
28,0 |
Tvj=125°C UR=0 tp=10 ms |
I2t |
Limiting load integral |
kA2s |
3920 |
Tvj=125°C, tp=10 ms , UR=0 |
(diò/dt) cr |
Critical rate of rise of on-state current : non - repetitive repetitive |
A/ms |
400 200 |
Tvj=125°C ; UD=0,67 UDRM, Gate pulse : 10V,5 W, 1ms rise time, 10 ms |
URGM |
Peak reverse gate voltage |
V |
5 |
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Tstg |
Storage temperature |
°C |
-60 ¸ 125 |
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Tvj |
Junction temperature |
°C |
-60 ¸ 125 |
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CHARACTERISTICS |
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SN53-xx12 |
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Symbols and parameters |
Units |
Conditions |
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UTM |
Peak on-state voltage |
V |
1,6 |
Tvj=25°C, ITM=3,14 ITAV |
UT(TO) |
Threshold voltage |
V |
0,95 |
Tvj=125°C |
RT |
On-state slope resistance |
mW |
0,17 |
Tvj=125°C |
IDRM IRRM |
Repetitive peak off-state and reverse current |
mA |
100 100 |
Tvj=125°C, UD = UDRM UR= URRM |
IH |
Holding current |
A |
0,5 |
Tvj=25°C,UD=12V, Gate open |
UGT |
Gate trigger direct voltage |
V |
2,5 |
Tvj=25°C, UD=12V |
IGT |
Gate trigger direct current |
A |
0,3 |
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UGD |
Gate non-trigger direct voltage |
V |
0,25 |
Tvj=125°C, UD = 0,67 UDRM |
tgd |
Delay time |
ms |
3,2 |
Tvj=25°C,UD=500V ITM = 1250 À Gate pulse : 10V, 5W, 1 ms rise time, 10ms |
tgt |
Turn-on time |
ms |
6,3 |
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tq |
Turn-off time |
ms |
160 ÷ 250
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Tvj=125°C, ITM =1250 À diR/dt =10 A/ms, UR=100V UD =
0,67 UDRM duD/dt=50 V/ms |
Qrr |
Recovered charge (typ) |
mC |
2500 |
Tvj=125°C, ITM =1250 À diR/dt =10 A/ms, UR=100V |
(duD/dt)crit
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Critical rate of rise of off-state voltage |
V/ms |
500 1000 |
Tvj=125°C, UD = 0,67 UDRM Gate open |
Rthjc
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Thermal resistance junction to case |
°C/W |
0,02 |
Direct current, double side cooled |
Mounting force : 19÷ 28 kN Weight : 580 gram |
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