www.shandor.infoSHANDOR Ltd. Plovdiv, Bulgaria

 

Type SN53-xx12

Phase Control Press-Pack Thyristor

 

High power solutions for the power electronics industry

 

 

Maximum mean on-state current ITAV 1250 A

Maximum repetitive peak off-state UDRM 1000 ¸1800 V

and reverse voltage URRM

Turn-off time tq 160; 200; 250 ms

 

UDRM , URRM , V

 

1000

 

1100

 

1200

 

1300

 

1400

 

1500

 

1600

 

1800

 

Voltage code - XX

 

10

 

11

 

12

 

13

 

14

 

15

 

16

 

18

 

Tvj, C

 

- 60 ¸ 125

 

MAXIMUM ALLOWABLE RATINGS

 

Symbols and parameters

 

Units

 

SN53-xx12

 

Conditions

ITAV

 

Mean on-state current

 

 

A

1250

1970

 

Tc=88 C,

Tc=55 C,

180 half-sine wave,

50 Hz

ITRMS

RMS on-state current

A

1960

Tc=88 C

ITSM

Surge on-state current

kA

28,0

Tvj=125C UR=0 tp=10 ms

I2t

Limiting load integral

kA2s

3920

Tvj=125C, tp=10 ms , UR=0

 

(di/dt) cr

 

Critical rate of rise

of on-state current :

non - repetitive

repetitive

 

A/ms

 

 

 

400

200

Tvj=125C ; UD=0,67 UDRM,

Gate pulse : 10V,5 W,

1ms rise time, 10 ms

URGM

Peak reverse gate voltage

V

5

 

Tstg

Storage temperature

C

-60 ¸ 125

 

Tvj

Junction temperature

C

-60 ¸ 125

 

CHARACTERISTICS

 

 

 

SN53-xx12

 

Symbols and parameters

Units

Conditions

UTM

Peak on-state voltage

V

1,6

Tvj=25C, ITM=3,14 ITAV

UT(TO)

Threshold voltage

V

0,95

Tvj=125C

RT

On-state slope resistance

mW

0,17

Tvj=125C

IDRM

IRRM

Repetitive peak

off-state and

reverse current

 

mA

 

100

100

Tvj=125C,

UD = UDRM

UR= URRM

IH

Holding current

A

0,5

Tvj=25C,UD=12V, Gate open

 

UGT

 

Gate trigger direct voltage

 

V

 

2,5

 

Tvj=25C, UD=12V

 

IGT

 

Gate trigger direct current

 

A

 

0,3

UGD

Gate non-trigger direct voltage

V

0,25

Tvj=125C, UD = 0,67 UDRM

 

tgd

 

Delay time

 

ms

 

3,2

Tvj=25C,UD=500V

ITM = 1250

Gate pulse : 10V, 5W,

1 ms rise time, 10ms

 

tgt

 

Turn-on time

 

ms

 

6,3

 

tq

 

Turn-off time

 

ms

 

 

160 ÷ 250

 

Tvj=125C, ITM =1250

diR/dt =10 A/ms, UR=100V

UD = 0,67 UDRM

duD/dt=50 V/ms

 

Qrr

 

Recovered charge (typ)

 

mC

 

2500

Tvj=125C, ITM =1250

diR/dt =10 A/ms, UR=100V

(duD/dt)crit

Critical rate of rise of

off-state voltage

V/ms

500

1000

Tvj=125C, UD = 0,67 UDRM

Gate open

 

Rthjc

 

 

Thermal resistance junction

to case

 

C/W

 

0,02

 

Direct current,

double side cooled

 

 

 

Mounting force : 19÷ 28 kN

Weight : 580 gram