SHANDOR
Ltd. Plovdiv, Bulgaria
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Type SF73-xx20
High Frequency Inverter grade Capsule Thyristor
Distributed amplified gate for high di/dt and low switching losses
Maximum mean on-state current ITAV 2000 A Maximum repetitive peak off-state UDRM 1200 ¸2200 V and reverse voltage URRM Turn-off time tq 32; 40; 50 ms |
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UDRM , URRM , V |
1200 |
1400 |
1600 |
1800 |
2000 |
2200 |
Voltage code - XX |
12 |
14 |
16 |
18 |
20 |
22 |
Tvj, °C |
- 60 ¸ 125 |
MAXIMUM ALLOWABLE RATINGS
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Symbols and parameters |
Units |
SF73-xx20 |
Conditions |
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ITAV |
Mean
on-state current
|
A |
2000 2890 |
Tc=85°C, Tc=55°C, 180° half-sine wave, 50 Hz |
ITRMS
|
RMS on-state current |
A |
3140 |
Tc=80°C, 50 Hz |
ITSM |
Surge on-state current |
kA |
40 |
Tvj=125°C
UR=0 tp=10 ms |
(diT/dt) cr |
Critical rate of rise of on-state current: non – repetitive repetitive |
A/ms |
1600 1000 |
Tvj=125°C; UD=0,67 UDRM, Gate pulse : 10V,5W, 1ms rise time, 10ms |
URGM |
Peak reverse gate voltage |
V |
5 |
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Tstg
|
Storage temperature |
°C |
-60 ¸ 125 |
|
Tvj |
Junction temperature |
°C |
-60 ¸ 125 |
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CHARACTERISTICS |
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SF73xx20 |
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Symbols and parameters |
Units |
Conditions |
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UTM |
Peak on-state voltage |
V |
2,2 |
Tvj=25°C, ITM=3,14 ITAV |
UT(TO) |
Threshold
voltage |
V |
1,3 |
Tvj=125°C |
rT |
Slope
resistance |
mW |
0,125 |
Tvj=125°C |
IDRM IRRM |
Repetitive
peak off-state and reverse current |
mA |
150 150 |
Tvj=125°C, UD= UDRM UR= URRM |
IH |
Holding
current |
A |
1,0 |
Tvj=25°C; UD=12, Gate open |
UGT |
Gate
trigger direct voltage |
V |
2,5 |
Tvj=25°C; UD=12V |
IGT |
Gate
trigger direct current |
A |
0,35 |
Tvj=25°C; UD=12V |
UGD |
Gate
non-trigger direct voltage |
V |
0,25 |
Tvj=125°C; UD=0,67 UDRM |
tgd |
Delay
time |
ms |
2,5 |
Tvj=25°C, UD=500V,ITM=2000A Gate pulse: 10V,5W, 1ms rise time, 10ms |
tgt |
Turn-on
time |
ms |
4,0 |
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tq |
Turn-off
time |
ms |
32¸50 40¸63 |
Tvj=125°C, ITM=2000A, diR/dt=
10 A/ms UR=100V UD=0,67 UDRM DiD/dt=
50 A/ms DiD/dt=
200 A/ms |
Qrr |
Recovered charge |
mC |
800 |
Tvj=125°C, ITM=2000A, diR/dt=
50 A/ms, UR=100V |
(diD/dt)
cr |
Critical rate of rise of off-state voltage |
V/ms |
500 1000 |
Tvj=125°C; UD=0,67 UDRM Gate open |
Rthjc |
Thermal
resistance junction
to case |
°C/W |
0,011 |
Direct
current, double
side cooled |
Mounting force : 36 – 46 kN Weight : 1600 grams |
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