www.shandor.infoSHANDOR  Ltd.  Plovdiv, Bulgaria

 

Type SF71C-xx25

Fast Stud Mounted Thyristor

 

Distributed amplified gate for high di/dt and low switching losses

 

 

Maximum mean on-state current                                                        ITAV                    250 A

Maximum repetitive peak off-state                                                    UDRM                600 ¸1200 V

and reverse voltage                                                                             URRM

Turn-off time                                                                                        tq                 16; 20; 25 ms 

 

UDRM ,  URRM ,   V

 

600

 

700

 

800

 

900

 

1000

 

1100

 

1200

 

Voltage code - XX

 

6

 

7

 

8

 

9

 

10

 

11

 

12

 

Tvj, °C

 

- 60 ¸ 125

 

MAXIMUM  ALLOWABLE  RATINGS

 

Symbols and parameters

 

Units

 

SF71C-xx25

 

Conditions

  

ITAV           

 

Mean  on-state current                  

 

 

A

250

353

 

Tc=92 °C,

Tc=73 °C,

180° half-sine wave,

50 Hz

ITRMS     

RMS on-state current                

A

392

554

Tc=92 °C

Tc=73 °C

ITSM 

Surge  on-state  current            

KA

7,0

Tvj=125°C  UR=0   tp=10 ms

 

(diò/dt) cr

 

Critical   rate of rise

of on-state current  :   

non - repetitive  

         repetitive        

 

A/ms

 

 

 

1600

800

 

Tvj=125°C ;  UD=0,67 UDRM,

 Gate pulse : 10V,5 W,

1ms rise time, 10 ms

URGM      

Peak reverse  gate voltage 

V

5

 

Tstg   

Storage temperature

°C

-60 ¸ 125

 

Tvj        

Junction temperature  

°C

-60 ¸ 125

 
CHARACTERISTICS

 

 

 

SF71C-xx25

 

Symbols and parameters

Units

Conditions

UTM         

Peak  on-state voltage            

V

2,1

Tvj=25°C, ITM=3,14 ITAV

UT(TO)

Threshold voltage

V

1,2

Tvj=125°C

RT

On-state slope resistance

mW

0,88

Tvj=125°C

 

IDRM      

IRRM                            

Repetitive peak

off-state and              

reverse   current

 

mA

 

50

50

Tvj=125°C,

UD = UDRM

UR=  URRM

IH           

Holding current

A

1,0

Tvj=25°C,UD=12V, Gate open

UGT

Gate trigger direct voltage

V

2,5

 

Tvj=25°C, UD=12V

IGT      

Gate trigger direct current

A

0,3

UGD          

Gate non-trigger direct  voltage           

V

0,25

Tvj=125°C, UD = 0,67 UDRM

 

tgd         

 

Delay time

 

ms

 

1,6

Tvj=25°C,UD=500V

 ITM = 250 À

Gate pulse : 10V, 5W,

1 ms rise time, 10ms

 

tgt           

 

Turn-on time

 

ms

 

2,5

 

tq            

 

Turn-off  time

 

ms

 

 

 

16¸25

20¸32

Tvj=125°C, ITM =250 À

diR/dt =10 A/ms, UR=100V

UD = 0,67 UDRM

duD/dt=50 V/ms 

duD/dt=200 V/ms

(duD/dt)crit              

            

Critical rate of rise of 

off-state voltage

V/ms

500

1000

Tvj=125°C,  UD = 0,67 UDRM

Gate open

Rthjc              

 

Thermal resistance junction

to  case

°C/W

0,075

Direct current

 

 

 

 

      Mounting force : 5 ¸ 7 kN

      Weight : 500 grams