www.shandor.infoSHANDOR Ltd. Plovdiv, Bulgaria

 

Type SF371-xx20

Fast Stud Mounted Thyristor

 

Distributed amplified gate for high di/dt and low switching losses

 

 

Maximum mean on-state current ITAV 200 A

Maximum repetitive peak off-state UDRM 1200 ¸2200 V

and reverse voltage URRM

Turn-off time tq 20; 25; 32 ms

 

UDRM , URRM , V

 

1200

 

1300

 

1400

 

1500

 

1600

 

1800

 

2000

 

2200

 

Voltage code - XX

 

12

 

13

 

14

 

15

 

16

 

18

 

20

 

22

 

Tvj, C

 

- 60 ¸ 125

 

MAXIMUM ALLOWABLE RATINGS

 

Symbols and parameters

 

Units

 

SF371-xx20

 

Conditions

ITAV

 

Mean on-state current

 

 

A

200

 

 

Tc=85 C,

180 half-sine wave,

50 Hz

ITRMS

RMS on-state current

A

314

 

Tc=85 C

 

ITSM

Surge on-state current

KA

6

Tvj=125C UR=0 tp=10 ms

 

(di/dt) cr

 

Critical rate of rise

of on-state current :

non - repetitive

repetitive

 

A/ms

 

 

 

1600

800

Tvj=125C ; UD=0,67 UDRM,

Gate pulse : 10V,5 W,

1ms rise time, 10 ms

URGM

Peak reverse gate voltage

V

5

 

Tstg

Storage temperature

C

-60 ¸ 125

 

Tvj

Junction temperature

C

-60 ¸ 125

 

CHARACTERISTICS

 

 

 

SF371-xx20

 

Symbols and parameters

Units

Conditions

UTM

Peak on-state voltage

V

2,3

Tvj=25C, ITM=3,14 ITAV

UT(TO)

Threshold voltage

V

1,45

Tvj=125C

RT

On-state slope resistance

mW

1,5

Tvj=125C

IDRM

IRRM

Repetitive peak

off-state and

reverse current

 

mA

 

70

70

Tvj=125C,

UD = UDRM

UR= URRM

IH

Holding current

A

0,3

Tvj=25C,UD=12V, Gate open

UGT

Gate trigger direct voltage

V

2,5

 

Tvj=25C, UD=12V

IGT

Gate trigger direct current

A

0,3

UGD

Gate non-trigger direct voltage

V

0,25

Tvj=125C, UD = 0,67 UDRM

 

tgd

 

Delay time

 

ms

 

1,6

Tvj=25C,UD=300V

ITM = 200

Gate pulse : 10V, 5W,

1 ms rise time, 10ms

 

tgt

 

Turn-on time

 

ms

 

2,5

 

tq

 

Turn-off time

 

ms

 

 

 

20¸32

25¸40

Tvj=125C, ITM =200

diR/dt =10 A/ms, UR=100V

UD = 0,67 UDRM

duD/dt=50 V/ms

duD/dt=200 V/ms

(duD/dt)crit

Critical rate of rise of

off-state voltage

V/ms

500

1000

Tvj=125C, UD = 0,67 UDRM

Gate open

Rthjc

 

Thermal resistance junction

to case

C/W

0,09

Direct current

 

 

 

 

Tightening torgue : 40 ¸ 60 Nm

Weight : 480 grams