www.shandor.infoSHANDOR  Ltd.  Plovdiv, Bulgaria

 

Type SF353-xx80

High Frequency Inverter grade Capsule Thyristor

 

Distributed amplified gate for high di/dt and low switching losses

 

 

Maximum mean on-state current                                                               IFAV                   800 A

Maximum repetitive peak off-state                                                            UDRM                2200 ¸3400 V

and reverse voltage                                                                                    URRM                                                    

Turn-off time                                                                                              tq               63; 80; 100 ms

 

UDRM,  URRM ,   V

 

 

 

 

2200

 

2400

 

2600

 

2800

 

3000

 

3200

 

3400

 

Voltage code - XX

 

 

 

 

22

 

24

 

26

 

28

 

30

 

32

 

34

 

Tvj, °C

 

- 60 ¸ 125

 

MAXIMUM  ALLOWABLE  RATINGS

 

Symbols and parameters

 

Units

 

SF353-xx80

 

Conditions

  

IFAV           

 

Mean  on-state current                  

 

 

A

800

1110

Tc=81°C,

Tc=55°C,

180° half-sine wave,

50 Hz

ITRMS      

RMS on-state current                

A

1255

Tc=81 °C, 50 Hz

ITSM 

Surge on-state  current            

kA

16

Tvj=125°C  UR=0   tp=10 ms

(diT/dt) cr

Critical rate of rise

of on-state current:

non – repetitive

          repetitive

 

A/ms

 

 

2000

1250

 

Tvj=125°C;  UD=0,67 UDRM,

Gate pulse : 10V,5W,

1ms rise time, 10ms

URGM

Peak reverse gate voltage

V

5

 

Tstg   

Storage temperature

°C

-60 ¸ 125

 

Tvj

Junction temperature

°C

-60 ¸ 125

 

         

CHARACTERISTICS

 

 

 

SF353xx80

 

Symbols and parameters

Units

Conditions

UTM         

Peak  on-state voltage             

V

2,6

Tvj=25°C,  ITM=3,14 ITAV

UT(TO)

Threshold voltage

V

1,6

Tvj=125°C

rT

Slope resistance

mW

0,51

Tvj=125°C

 

IDRM

IRRM                            

Repetitive peak off-state   and reverse current

 

mA

 

90

90

Tvj=125°C,

UD=  UDRM

UR=  URRM

IL

Latching current

A

15

Tvj=25°C;  UD=12V, Gate pulse:

10V,5W, 1ms rise time, 10ms

IH

Holding current

A

1,0

Tvj=25°C;  UD=12, Gate open

UGT

Gate trigger direct voltage

V

2,5

Tvj=25°C;  UD=12V

IGT

Gate trigger direct current

A

0,3

Tvj=25°C;  UD=12V

UGD

Gate non-trigger direct voltage

V

0,25

Tvj=125°C;  UD=0,67 UDRM

tgd

Delay time

ms

2,5

Tvj=25°C, UD=500V, ITM=800A

Gate pulse: 10V,5W,

1ms rise time, 10ms

tgt

Turn-on time

ms

4,0

tq

 

 

Turn-off time

 

 

ms

 

 

 

     63¸100

  80¸125

Tvj=125°C, ITM=800A, 

diR/dt= 10 A/ms UR=100V

UD=0,67 UDRM

DiD/dt= 50 A/ms

DiD/dt= 200 A/ms

Qrr

 

Recovered  charge

 

mC

1200

Tvj=125°C, ITM=800A,

diR/dt= 50 A/ms, UR=100V

(diD/dt) cr

Critical rate of rise

of off-state voltage

V/ms

500

1000

Tvj=125°C;  UD=0,67 UDRM

Gate open

Rthjc              

Thermal resistance

junction to  case

 

°C/W

 

0,021

Direct current,

double side cooled

 

 

 

      Mounting force : 19 – 28 kN

      Weight : 580 gram