SHANDOR Ltd. Plovdiv, Bulgaria
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Type SF353-xx80
High Frequency Inverter grade
Capsule Thyristor
Distributed amplified gate for high
di/dt and low switching losses
Maximum
mean on-state current IFAV 800 A Maximum
repetitive peak off-state UDRM 2200 ¸3400 V and reverse
voltage
URRM Turn-off time
tq 63; 80; 100 ms |
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UDRM, URRM , V |
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2200 |
2400 |
2600 |
2800 |
3000 |
3200 |
3400 |
Voltage
code - XX |
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22 |
24 |
26 |
28 |
30 |
32 |
34 |
Tvj, °C |
- 60 ¸ 125 |
MAXIMUM ALLOWABLE RATINGS
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Symbols and parameters |
Units |
SF353-xx80 |
Conditions |
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IFAV |
Mean
on-state current
|
A |
800 1110 |
Tc=81°C, Tc=55°C, 180° half-sine wave, 50 Hz |
ITRMS
|
RMS on-state current |
A |
1255 |
Tc=81 °C, 50 Hz |
ITSM |
Surge on-state current |
kA |
16 |
Tvj=125°C UR=0 tp=10 ms |
(diT/dt) cr |
Critical rate of rise of on-state current: non – repetitive
repetitive |
A/ms |
2000 1250 |
Tvj=125°C; UD=0,67 UDRM, Gate
pulse : 10V,5W, 1ms rise time, 10ms |
URGM |
Peak reverse gate voltage |
V |
5 |
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Tstg
|
Storage temperature |
°C |
-60 ¸ 125 |
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Tvj |
Junction temperature |
°C |
-60 ¸ 125 |
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CHARACTERISTICS |
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SF353xx80 |
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Symbols and parameters |
Units |
Conditions |
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UTM |
Peak on-state voltage |
V |
2,6 |
Tvj=25°C, ITM=3,14 ITAV |
UT(TO) |
Threshold
voltage |
V |
1,6 |
Tvj=125°C |
rT |
Slope
resistance |
mW |
0,51 |
Tvj=125°C |
IDRM IRRM |
Repetitive
peak off-state and reverse current |
mA |
90 90 |
Tvj=125°C, UD= UDRM UR= URRM |
IL |
Latching
current |
A |
15 |
Tvj=25°C; UD=12V, Gate
pulse: 10V,5W, 1ms rise time, 10ms |
IH |
Holding
current |
A |
1,0 |
Tvj=25°C; UD=12, Gate
open |
UGT |
Gate
trigger direct voltage |
V |
2,5 |
Tvj=25°C; UD=12V |
IGT |
Gate
trigger direct current |
A |
0,3 |
Tvj=25°C; UD=12V |
UGD |
Gate
non-trigger direct voltage |
V |
0,25 |
Tvj=125°C; UD=0,67 UDRM |
tgd |
Delay
time |
ms |
2,5 |
Tvj=25°C, UD=500V, ITM=800A Gate
pulse: 10V,5W, 1ms rise time, 10ms |
tgt |
Turn-on
time |
ms |
4,0 |
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tq |
Turn-off
time |
ms |
63¸100 80¸125 |
Tvj=125°C, ITM=800A, diR/dt=
10 A/ms UR=100V UD=0,67 UDRM DiD/dt=
50 A/ms DiD/dt=
200 A/ms |
Qrr |
Recovered charge |
mC |
1200 |
Tvj=125°C, ITM=800A, diR/dt=
50 A/ms, UR=100V |
(diD/dt) cr |
Critical rate of rise of
off-state voltage |
V/ms |
500 1000 |
Tvj=125°C; UD=0,67 UDRM Gate open |
Rthjc |
Thermal
resistance junction
to case |
°C/W |
0,021 |
Direct
current, double side
cooled |
Mounting force : 19 – 28 kN Weight : 580 gram |
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