www.shandor.infoSHANDOR Ltd. Plovdiv, Bulgaria

 

Type SF353-xx80

High Frequency Inverter grade Capsule Thyristor

 

Distributed amplified gate for high di/dt and low switching losses

 

 

Maximum mean on-state current IFAV 800 A

Maximum repetitive peak off-state UDRM 2200 ¸3400 V

and reverse voltage URRM

Turn-off time tq 63; 80; 100 ms

 

UDRM, URRM , V

 

 

 

 

2200

 

2400

 

2600

 

2800

 

3000

 

3200

 

3400

 

Voltage code - XX

 

 

 

 

22

 

24

 

26

 

28

 

30

 

32

 

34

 

Tvj, C

 

- 60 ¸ 125

 

MAXIMUM ALLOWABLE RATINGS

 

Symbols and parameters

 

Units

 

SF353-xx80

 

Conditions

IFAV

 

Mean on-state current

 

 

A

800

1110

Tc=81C,

Tc=55C,

180 half-sine wave,

50 Hz

ITRMS

RMS on-state current

A

1255

Tc=81 C, 50 Hz

ITSM

Surge on-state current

kA

16

Tvj=125C UR=0 tp=10 ms

(diT/dt) cr

Critical rate of rise

of on-state current:

non repetitive

repetitive

 

A/ms

 

 

2000

1250

 

Tvj=125C; UD=0,67 UDRM,

Gate pulse : 10V,5W,

1ms rise time, 10ms

URGM

Peak reverse gate voltage

V

5

 

Tstg

Storage temperature

C

-60 ¸ 125

 

Tvj

Junction temperature

C

-60 ¸ 125

 

CHARACTERISTICS

 

 

 

SF353xx80

 

Symbols and parameters

Units

Conditions

UTM

Peak on-state voltage

V

2,6

Tvj=25C, ITM=3,14 ITAV

UT(TO)

Threshold voltage

V

1,6

Tvj=125C

rT

Slope resistance

mW

0,51

Tvj=125C

IDRM

IRRM

Repetitive peak off-state and reverse current

 

mA

 

90

90

Tvj=125C,

UD= UDRM

UR= URRM

IL

Latching current

A

15

Tvj=25C; UD=12V, Gate pulse:

10V,5W, 1ms rise time, 10ms

IH

Holding current

A

1,0

Tvj=25C; UD=12, Gate open

UGT

Gate trigger direct voltage

V

2,5

Tvj=25C; UD=12V

IGT

Gate trigger direct current

A

0,3

Tvj=25C; UD=12V

UGD

Gate non-trigger direct voltage

V

0,25

Tvj=125C; UD=0,67 UDRM

tgd

Delay time

ms

2,5

Tvj=25C, UD=500V, ITM=800A

Gate pulse: 10V,5W,

1ms rise time, 10ms

tgt

Turn-on time

ms

4,0

tq

 

 

Turn-off time

 

 

ms

 

 

 

63¸100

80¸125

Tvj=125C, ITM=800A,

diR/dt= 10 A/ms UR=100V

UD=0,67 UDRM

DiD/dt= 50 A/ms

DiD/dt= 200 A/ms

Qrr

 

Recovered charge

 

mC

1200

Tvj=125C, ITM=800A,

diR/dt= 50 A/ms, UR=100V

(diD/dt) cr

Critical rate of rise

of off-state voltage

V/ms

500

1000

Tvj=125C; UD=0,67 UDRM

Gate open

Rthjc

Thermal resistance

junction to case

 

C/W

 

0,021

Direct current,

double side cooled

 

 

 

Mounting force : 19 28 kN

Weight : 580 gram