www.shandor.infoSHANDOR  Ltd.  Plovdiv, Bulgaria

 

Type SF053S-xx10

High Frequency Inverter grade Capsule Thyristor

 

Strong distributed amplified gate and  low turn-off time thyristor for

high frequency applications to 20 kHz

 

Maximum mean on-state current                                                       ITAV                     1000 A

Maximum repetitive peak off-state                                                   UDRM                800 ¸1400 V

and reverse voltage                                                                            URRM

Turn-off time                                                                                        tq                   10; 12,5  ms 

 

UDRM ,  URRM ,   V

 

800

 

900

 

1000

 

1100

 

1200

 

1300

 

1400

 

Voltage code - XX

 

8

 

9

 

10

 

11

 

12

 

13

 

14

 

Tvj, °C

 

- 60 ¸ 125

 

MAXIMUM  ALLOWABLE  RATINGS

 

Symbols and parameters

 

Units

 

SF053S-xx10

 

Conditions

  

ITAV           

 

Mean  on-state current                  

 

 

A

1000

1395

 

Tc=80 °C,

Tc=55 °C,

180° half-sine wave,

50 Hz

ITRMS      

RMS on-state current                

A

1570

Tc=80 °C

ITSM 

Surge  on-state  current            

kA

20

Tvj=125°C  UR=0   tp=10 ms

 

(diò/dt) cr

 

Critical   rate of rise

of on-state current  :   

non - repetitive  

         repetitive        

 

A/ms

 

 

 

1600

1000

 

Tvj=125°C ;  UD=0,67 UDRM,

 Gate pulse : 10V,5 W,

1ms rise time, 10 ms

URGM      

Peak reverse  gate voltage 

V

5

 

Tstg   

Storage temperature

°C

-60 ¸ 80

 

Tvj        

Junction temperature  

°C

-60 ¸ 125

 
CHARACTERISTICS

 

 

 

SF053S-xx10

 

Symbols and parameters

Units

Conditions

UTM         

Peak  on-state voltage            

V

2,3

Tvj=25°C, ITM=3,14 ITAV

UT(TO)

Threshold voltage

V

1,35

Tvj=125°C

RT

On-state slope resistance

mW

0,3

Tvj=125°C

 

IDRM      

IRRM                            

Repetitive peak

off-state and              

reverse   current

 

mA

 

100

100

Tvj=125°C,

UD = UDRM

UR=  URRM

 

IL

 

Latching current

 

A

 

20

Tvj=25°C,UD=12V

Gate pulse : 10V, 5W,

1 ms rise time, 10ms

IH           

Holding current

A

1,0

Tvj=25°C,UD=12V, Gate open

UGT

Gate trigger direct voltage

V

2,5

 

Tvj=25°C, UD=12V

IGT      

Gate trigger direct current

A

0,3

UGD          

 Gate non-trigger direct  voltage           

V

0,25

Tvj=125°C, UD = 0,67 UDRM

 

tgd         

 

Delay time

 

ms

 

1,6

Tvj=25°C,UD=500V

 ITM =1000 À

Gate pulse : 10V, 5W,

1 ms rise time, 10ms

 

tgt           

 

Turn-on time

 

ms

 

2,5

 

tq            

 

Turn-off  time

 

ms

 

 

 

   10¸12,5

12,5¸16

Tvj=125°C, ITM =1000 À

diR/dt =10 A/ms, UR=100V

UD = 0,67 UDRM

duD/dt=50 V/ms 

duD/dt=200 V/ms

 

Qrr

 

Recovered charge

 

mC

 

250

Tvj=125°C, ITM =1000 À

diR/dt =50 A/ms, UR=100V

(duD/dt)crit              

            

Critical rate of rise of 

off-state voltage

V/ms

500

1000

Tvj=125°C,  UD = 0,67 UDRM

Gate open

Rthjc              

 

Thermal resistance junction

to  case

°C/W

0,022

Direct current,

double side cooled

 

 

 

      Mounting force : 19 – 28 kN

      Weight : 580 gram