www.shandor.infoSHANDOR Ltd. Plovdiv, Bulgaria

 

Type SF043-xx40

High Frequency Inverter grade Capsule Thyristor

 

Distributed amplified gate for high di/dt and low switching losses

 

 

Maximum mean on-state current IFAV 400 A

Maximum repetitive peak off-state UDRM 800 ¸1500 V

and reverse voltage URRM

Turn-off time tq 6,3; 8; 10; ms

 

UDRM, URRM , V

 

 

 

800

 

900

 

1000

 

1100

 

1200

 

1300

 

1400

 

1500

 

Voltage code - XX

 

 

 

08

 

09

 

10

 

11

 

12

 

13

 

14

 

15

 

Tvj, C

 

- 60 ¸ 125

 

MAXIMUM ALLOWABLE RATINGS

 

Symbols and parameters

 

Units

 

SF043-xx40

 

Conditions

IFAV

 

Mean on-state current

 

 

A

400

716

Tc=93C,

Tc=55C,

180 half-sine wave,

50 Hz

ITRMS

RMS on-state current

A

628

Tc=93 C, 50 Hz

ITSM

Surge on-state current

kA

8

Tvj=125C UR=0 tp=10 ms

(diT/dt) cr

Critical rate of rise

of on-state current:

non repetitive

repetitive

 

A/ms

 

 

2000

1250

 

Tvj=125C; UD=0,67 UDRM,

Gate pulse : 10V,5W,

1ms rise time, 10ms

URGM

Peak reverse gate voltage

V

5

 

Tstg

Storage temperature

C

-60 ¸ 125

 

Tvj

Junction temperature

C

-60 ¸ 125

 

CHARACTERISTICS

 

 

 

SF043xx40

 

Symbols and parameters

Units

Conditions

UTM

Peak on-state voltage

V

2,6

Tvj=25C, ITM=3,14 ITAV

UT(TO)

Threshold voltage

V

1,6

Tvj=125C

rT

Slope resistance

mW

0,82

Tvj=125C

IDRM

IRRM

Repetitive peak off-state and reverse current

 

mA

 

70

70

Tvj=125C,

UD= UDRM

UR= URRM

IL

Latching current

A

8

Tvj=25C; UD=12V, Gate pulse:

10V,5W, 1ms rise time, 10ms

IH

Holding current

A

1,0

Tvj=25C; UD=12, Gate open

UGT

Gate trigger direct voltage

V

2,5

Tvj=25C; UD=12V

IGT

Gate trigger direct current

A

0,3

Tvj=25C; UD=12V

UGD

Gate non-trigger direct voltage

V

0,25

Tvj=125C; UD=0,67 UDRM

tgd

Delay time

ms

1,6

Tvj=25C, UD=400V, ITM=400A

Gate pulse: 10V,5W,

1ms rise time, 10ms

tgt

Turn-on time

ms

2,5

tq

 

 

Turn-off time

 

 

ms

 

 

 

6,3¸10

8¸12,5

Tvj=125C, ITM=400A,

diR/dt= 10 A/ms UR=100V

UD=0,67 UDRM

DiD/dt= 50 A/ms

DiD/dt= 200 A/ms

Qrr

 

Recovered charge

 

mC

100

Tvj=125C, ITM=400A,

diR/dt= 50 A/ms, UR=100V

(diD/dt) cr

Critical rate of rise

of off-state voltage

V/ms

500

1000

Tvj=125C; UD=0,67 UDRM

Gate open

Rthjc

Thermal resistance

junction to case

 

C/W

 

0,032

Direct current,

double side cooled

 

 

 

Mounting force : 13 ¸ 19 kN

Weight : 340 gram