www.shandor.infoSHANDOR Ltd. Plovdiv, Bulgaria

 

Type SF033-xx40

High Frequency Inverter grade Capsule Thyristor

 

Distributed amplified gate for high di/dt and low switching losses

 

 

Maximum mean on-state current IFAV 400 A

Maximum repetitive peak off-state UDRM 300 ¸1000 V

and reverse voltage URRM

Turn-off time tq 8; 10; 12,5; 16 ms

 

UDRM, URRM , V

 

 

 

300

 

400

 

500

 

600

 

700

 

800

 

900

 

1000

 

Voltage code - XX

 

 

 

03

 

04

 

05

 

06

 

07

 

08

 

09

 

10

 

Tvj, C

 

- 60 ¸ 125

 

MAXIMUM ALLOWABLE RATINGS

 

Symbols and parameters

 

Units

 

SF033-xx40

 

Conditions

IFAV

 

Mean on-state current

 

 

A

400

720

Tc=85C,

Tc=55C,

180 half-sine wave,

50 Hz

ITRMS

RMS on-state current

A

628

Tc=85 C, 50 Hz

ITSM

Surge on-state current

kA

10

Tvj=125C UR=0 tp=10 ms

(diT/dt) cr

Critical rate of rise

of on-state current:

non repetitive

repetitive

 

A/ms

 

 

1600

1000

 

Tvj=125C; UD=0,67 UDRM,

Gate pulse : 10V,5W,

1ms rise time, 10ms

URGM

Peak reverse gate voltage

V

5

 

Tstg

Storage temperature

C

-60 ¸ 125

 

Tvj

Junction temperature

C

-60 ¸ 125

 

CHARACTERISTICS

 

 

 

SF033xx40

 

Symbols and parameters

Units

Conditions

UTM

Peak on-state voltage

V

2,35

Tvj=25C, ITM=3,14 ITAV

UT(TO)

Threshold voltage

V

1,40

Tvj=125C

rT

Slope resistance

mW

0,57

Tvj=125C

IDRM

IRRM

Repetitive peak off-state and reverse current

 

mA

 

50

50

Tvj=125C,

UD= UDRM

UR= URRM

IL

Latching current

A

5

Tvj=25C; UD=12V, Gate pulse:

10V,5W, 1ms rise time, 10ms

IH

Holding current

A

1,0

Tvj=25C; UD=12, Gate open

UGT

Gate trigger direct voltage

V

2,5

Tvj=25C; UD=12V

IGT

Gate trigger direct current

A

0,3

Tvj=25C; UD=12V

UGD

Gate non-trigger direct voltage

V

0,25

Tvj=125C; UD=0,67 UDRM

tgd

Delay time

ms

2,0

Tvj=25C, UD=500V, ITM=400A

Gate pulse: 10V,5W,

1ms rise time, 10ms

tgt

Turn-on time

ms

3,2

tq

 

 

Turn-off time

 

 

ms

 

 

 

8¸16

10¸20

Tvj=125C, ITM=400A,

diR/dt= 10 A/ms UR=100V

UD=0,67 UDRM

DiD/dt= 50 A/ms

DiD/dt= 200 A/ms

Qrr

 

Recovered charge

 

mC

100

Tvj=125C, ITM=400A,

diR/dt= 50 A/ms, UR=100V

(diD/dt) cr

Critical rate of rise

of off-state voltage

V/ms

500

1000

Tvj=125C; UD=0,67 UDRM

Gate open

Rthjc

Thermal resistance

junction to case

 

C/W

 

0,04

Direct current,

double side cooled

 

 

 

Mounting force : 10 ¸ 15 kN

Weight : 250 gram