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Type SF033-xx40
High Frequency Inverter grade
Capsule Thyristor
Distributed amplified gate for high
di/dt and low switching losses
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Maximum
mean on-state current IFAV 400 A Maximum
repetitive peak off-state UDRM 300 ¸1000 V and
reverse voltage
URRM Turn-off time tq 8; 10; 12,5; 16 ms |
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UDRM, URRM , V |
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300 |
400 |
500 |
600 |
700 |
800 |
900 |
1000 |
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Voltage
code - XX |
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03 |
04 |
05 |
06 |
07 |
08 |
09 |
10 |
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Tvj, °C |
- 60 ¸ 125 |
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MAXIMUM ALLOWABLE RATINGS
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Symbols and parameters |
Units |
SF033-xx40 |
Conditions |
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IFAV |
Mean
on-state current
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A |
400 720 |
Tc=85°C, Tc=55°C, 180° half-sine wave, 50 Hz |
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ITRMS
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RMS on-state current |
A |
628 |
Tc=85 °C, 50 Hz |
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ITSM |
Surge on-state current |
kA |
10 |
Tvj=125°C UR=0 tp=10 ms |
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(diT/dt) cr |
Critical rate of rise of on-state current: non – repetitive
repetitive |
A/ms |
1600 1000 |
Tvj=125°C; UD=0,67 UDRM, Gate
pulse : 10V,5W, 1ms rise time, 10ms |
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URGM |
Peak reverse gate voltage |
V |
5 |
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Tstg
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Storage temperature |
°C |
-60 ¸ 125 |
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Tvj |
Junction temperature |
°C |
-60 ¸ 125 |
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CHARACTERISTICS |
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SF033xx40 |
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Symbols and parameters |
Units |
Conditions |
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UTM |
Peak on-state voltage |
V |
2,35 |
Tvj=25°C, ITM=3,14 ITAV |
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UT(TO) |
Threshold
voltage |
V |
1,40 |
Tvj=125°C |
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rT |
Slope
resistance |
mW |
0,57 |
Tvj=125°C |
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IDRM IRRM |
Repetitive
peak off-state and reverse current |
mA |
50 50 |
Tvj=125°C, UD= UDRM UR= URRM |
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IL |
Latching
current |
A |
5 |
Tvj=25°C; UD=12V, Gate
pulse: 10V,5W, 1ms rise time, 10ms |
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IH |
Holding
current |
A |
1,0 |
Tvj=25°C; UD=12, Gate
open |
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UGT |
Gate
trigger direct voltage |
V |
2,5 |
Tvj=25°C; UD=12V |
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IGT |
Gate
trigger direct current |
A |
0,3 |
Tvj=25°C; UD=12V |
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UGD |
Gate
non-trigger direct voltage |
V |
0,25 |
Tvj=125°C; UD=0,67 UDRM |
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tgd |
Delay
time |
ms |
2,0 |
Tvj=25°C, UD=500V, ITM=400A Gate
pulse: 10V,5W, 1ms rise time, 10ms |
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tgt |
Turn-on
time |
ms |
3,2 |
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tq |
Turn-off
time |
ms |
8¸16 10¸20 |
Tvj=125°C, ITM=400A, diR/dt=
10 A/ms UR=100V UD=0,67 UDRM DiD/dt=
50 A/ms DiD/dt=
200 A/ms |
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Qrr |
Recovered charge |
mC |
100 |
Tvj=125°C, ITM=400A, diR/dt=
50 A/ms, UR=100V |
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(diD/dt) cr |
Critical rate of rise of
off-state voltage |
V/ms |
500 1000 |
Tvj=125°C; UD=0,67 UDRM Gate open |
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Rthjc |
Thermal
resistance junction
to case |
°C/W |
0,04 |
Direct
current, double
side cooled |
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Mounting force : 10 ¸
15 kN Weight : 250 gram |
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